同结太阳能电池的饱和光电压、内置电位和带隙缩小

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105799

R. Mertens, M. Mauk, S. Jain, G. Borghs, R. van Overstraeten

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引用次数: 0

摘要

带隙的缩小限制了p-n结太阳能电池在低注入和高注入下的开路电压。作者开发了一种方法来估计带隙的缩小(以及伴随的内置电位的减少)使用电容电压测量。然后，他们将该方法应用于通过分子束外延生长的高突变重掺杂砷化镓二极管。测量结果清楚地表明，在高掺杂的GaAs中，带隙明显缩小

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Saturated photovoltage, built-in potential and bandgap-narrowing in homojunction solar cells

Bandgap narrowing limits the open-circuit voltage of p-n junction solar cells both at low and high-level injection. The authors develop a method to estimate bandgap narrowing (and the accompanying reduction in built-in potential) using capacitance-voltage measurements. They then apply the method to hyperabrupt heavily doped GaAs diodes grown by molecular-beam epitaxy. The measured results clearly indicate substantial bandgap narrowing in heavily doped GaAs.<>

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

发文量