V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, M. Shur
{"title":"石墨烯层和石墨烯双层中非平衡电子空穴等离子体的热容","authors":"V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, M. Shur","doi":"10.1103/PhysRevB.103.245414","DOIUrl":null,"url":null,"abstract":"We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \\simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \\simeq 2.37$ at $T \\lesssim 300$~K to $c_{GBL} \\simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":"8 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene bilayers\",\"authors\":\"V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, M. Shur\",\"doi\":\"10.1103/PhysRevB.103.245414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \\\\simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \\\\simeq 2.37$ at $T \\\\lesssim 300$~K to $c_{GBL} \\\\simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices.\",\"PeriodicalId\":8465,\"journal\":{\"name\":\"arXiv: Mesoscale and Nanoscale Physics\",\"volume\":\"8 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv: Mesoscale and Nanoscale Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1103/PhysRevB.103.245414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Mesoscale and Nanoscale Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PhysRevB.103.245414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene bilayers
We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \simeq 2.37$ at $T \lesssim 300$~K to $c_{GBL} \simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices.