F. Disegni, R. Annunziata, A. Molgora, G. Campardo, P. Cappelletti, P. Zuliani, P. Ferreira, A. Ventre, Giuseppe Castagna, A. Cathelin, A. Gandolfo, F. Goller, S. Malhi, D. Manfrè, A. Maurelli, C. Torti, F. Arnaud, M. Carfì, M. Perroni, M. Caruso, S. Pezzini, G. Piazza, O. Weber, M. Peri
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引用次数: 5
摘要
本文提出了一种基于BEOL pcm的e-NVM解决方案，该方案集成了28nm FD-SOI CMOS技术，在面积、读写时间和温度范围方面具有优异的性能。在汽车级(Tj高达165C)微控制器芯片中集成了6MB PCM，展示了满足苛刻汽车环境所有标准的强大解决方案。用于PCM的Gex by Tez材料[1]已经调整到达到165C合规性和10年的数据保留。CMOS 28nm FD-SOI已被确定为开发PCM能力的最佳技术[2]。该技术还提供汽车应用所需的全功能5V器件。FD-SOI的体偏置允许控制电路和存储阵列内未选择位的静态泄漏，从而优化功能。
Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI
The paper proposes a BEOL PCM-based e-NVM solution integrated in a 28nm FD-SOI CMOS technology, giving excellent performances in terms of area, read and write time and temperature range. The integration of a 6MB PCM in an automotive grade (Tj up to 165C) microcontroller chip is presented here, exhibiting a robust solution satisfying all criteria of the demanding automotive environment. The Gex Sby Tez material used for the PCM [1] has been tuned to reach the 165C compliance and 10 years data retention. CMOS 28nm FD-SOI has been determined as the optimal technology to exploit PCM capabilities [2]. Technology also offers full feature 5V devices required for automotive application. Body bias of the FD-SOI allows controlling the quiescent leakage both in circuitry and in the unselected bits inside the memory array, optimizing the functionality.
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