{"title":"CMOS技术中的堆叠电感和1对2变压器","authors":"A. Zolfaghari, A. Chan, Behzad Razavi","doi":"10.1109/CICC.2000.852681","DOIUrl":null,"url":null,"abstract":"A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Stacked inductors and 1-to-2 transformers in CMOS technology\",\"authors\":\"A. Zolfaghari, A. Chan, Behzad Razavi\",\"doi\":\"10.1109/CICC.2000.852681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stacked inductors and 1-to-2 transformers in CMOS technology
A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers.