采用本地互连的门阵列库设计

L. Wissel, D. Stout, Nathan C. Buck
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引用次数: 4

摘要

在0.4 /spl mu/m CMOS技术下,利用本地互连级创建了一个ASIC门阵列库。此库中的门阵列单元比没有本地互连的库中的门阵列单元更密集。两个基准的比较,包括与两个库路由的520k门ASIC,进一步表明,由于更有效地使用全局互连层,本地互连允许更高密度的ASIC设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gate-array library design using local interconnect
An ASIC gate-array library has been created in 0.4 /spl mu/m CMOS technology using a local interconnect level. The gate-array cells in this library are denser than their counterparts in a library without local interconnect. The comparison of two benchmarks, including a 520K-gate ASIC routed with both libraries, further shows that the local interconnect allows higher density of ASIC designs due to more efficient use of the global inter-connect layers.
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CiteScore
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