H. Cai, X.M. Zhang, J. Wu, D. Tang, Q. Zhang, A. Liu
{"title":"大调谐范围MEMS可调谐双波长激光器","authors":"H. Cai, X.M. Zhang, J. Wu, D. Tang, Q. Zhang, A. Liu","doi":"10.1109/SENSOR.2007.4300413","DOIUrl":null,"url":null,"abstract":"This paper presents a MEMS tunable dual-wave length laser, which simultaneously achieves wide tuning range and two-longitudinal-mode emission. The construction of this laser is based on Littman external cavity configuration. The key point is to use two micro-mirrors to select two different wavelengths at their independent diffraction modes, and the emission of both wavelengths will be collected through the 0th order of the grating. Meanwhile, wavelength tuning is achieved by rotating one of the mirrors. As a result, a tunable spectral separation of dual-wave length output is obtained. The MEMS device is fabricated by DRIE on SOI wafer, with the size of 3 mm times 3 mm.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"70 1","pages":"1433-1436"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"MEMS Tunable Dual-Wavelength Laser with Large Tuning Range\",\"authors\":\"H. Cai, X.M. Zhang, J. Wu, D. Tang, Q. Zhang, A. Liu\",\"doi\":\"10.1109/SENSOR.2007.4300413\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a MEMS tunable dual-wave length laser, which simultaneously achieves wide tuning range and two-longitudinal-mode emission. The construction of this laser is based on Littman external cavity configuration. The key point is to use two micro-mirrors to select two different wavelengths at their independent diffraction modes, and the emission of both wavelengths will be collected through the 0th order of the grating. Meanwhile, wavelength tuning is achieved by rotating one of the mirrors. As a result, a tunable spectral separation of dual-wave length output is obtained. The MEMS device is fabricated by DRIE on SOI wafer, with the size of 3 mm times 3 mm.\",\"PeriodicalId\":23295,\"journal\":{\"name\":\"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference\",\"volume\":\"70 1\",\"pages\":\"1433-1436\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2007.4300413\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2007.4300413","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MEMS Tunable Dual-Wavelength Laser with Large Tuning Range
This paper presents a MEMS tunable dual-wave length laser, which simultaneously achieves wide tuning range and two-longitudinal-mode emission. The construction of this laser is based on Littman external cavity configuration. The key point is to use two micro-mirrors to select two different wavelengths at their independent diffraction modes, and the emission of both wavelengths will be collected through the 0th order of the grating. Meanwhile, wavelength tuning is achieved by rotating one of the mirrors. As a result, a tunable spectral separation of dual-wave length output is obtained. The MEMS device is fabricated by DRIE on SOI wafer, with the size of 3 mm times 3 mm.