源端垂直寄生肖特基结构高压nLDMOS的抗静电性研究

IF 1.3 Q3 COMPUTER SCIENCE, INFORMATION SYSTEMS
Xing-Chen Mai, Shen-Li Chen, Jhong-Yi Lai, Zhi-Wei Liu, Yu-Jie Chung
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引用次数: 0

摘要

本文采用TSMC $0.18- {\mu} \ maththrm {m}$ BCD工艺实现高压n-LDMOS器件。然后,移除参考器件的源端$n^{{+}}$层,使源端成为寄生肖特基器件。接下来,本文将评估其对放电电流能力的影响。本工作测试的器件有四种,分别为参考型、全源-肖特基型MM、去除半源电极MN和源端半肖特基型NM器件。根据TLP测试结果,可以得到回跳曲线的三个重要值:触发电压(${\mathrm{V}}_{\mathrm t1}}$)、保持电压(${\mathrm{V}}_{\mathrm{h}}}$)和二次击穿电流(${\mathrm{I}}_{{\mathrm{t}}2}$)。最后可以得出,如果在源端增加一个肖特基器件,由于该肖特基器件的串联会增加导通电阻,则触发电压可提高约2V,保持电压可提高约8V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ESD-immunity Study of High-voltage nLDMOS with Vertical Parasitic Schottky Structures in the Source End
In this paper, a TSMC $0.18- {\mu} \mathrm{m}$ BCD process is used to realize high-voltage n-LDMOS devices. And then, the source side $n^{{+}}$ layer of the reference device is removed, so that the source terminal will make a parasitic Schottky device. Next, in this paper, we will evaluate its impacts on the discharge current capability. There are four kinds of tested devices in this work, which are the reference, with whole source -Schottky MM, and removed half source electrode MN and maked half Schottky in source end NM type devices, respectively. According to the TLP testing results, three important values of snapback curve can be obtained: trigger voltage (${\mathrm{V}}_{{\mathrm t1}}$), holding voltage (${\mathrm{V}}_{{\mathrm{h}}}$), and secondary breakdown current (${\mathrm{I}}_{{\mathrm{t}}2}$). Finally, it can be concluded that if a Schottky device is added to the source terminal, the on-resistance will be increased due to the series connection of this Schottky device, then the trigger voltage can be increased about 2V and holding voltage increased about 8V.
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来源期刊
IET Networks
IET Networks COMPUTER SCIENCE, INFORMATION SYSTEMS-
CiteScore
5.00
自引率
0.00%
发文量
41
审稿时长
33 weeks
期刊介绍: IET Networks covers the fundamental developments and advancing methodologies to achieve higher performance, optimized and dependable future networks. IET Networks is particularly interested in new ideas and superior solutions to the known and arising technological development bottlenecks at all levels of networking such as topologies, protocols, routing, relaying and resource-allocation for more efficient and more reliable provision of network services. Topics include, but are not limited to: Network Architecture, Design and Planning, Network Protocol, Software, Analysis, Simulation and Experiment, Network Technologies, Applications and Services, Network Security, Operation and Management.
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