基于λ/4变压器的0.13µm SiGe BiCMOS谐波滤波器的39-42 GHz 43% PAE反f类功率放大器

2016 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2016-05-22 DOI:10.1109/MWSYM.2016.7540383

S. Y. Mortazavi, Kwang-Jin Koh

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引用次数: 12

摘要

本文提出了一种采用0.13 μm SiGe BiCMOS工艺的两级f -1类功率放大器，在40.5 GHz时可实现43%的峰值PAE和18 dBm的Psat。PA采用简单但有效的基于λ/4变压器的二次谐波调谐负载，并依赖于原生的低容性电抗来缩短所有其他高阶谐波。这大大降低了谐波负载的复杂性及其损耗，在39.5-42 GHz时超过40%的PAE。放大器可实现> 17db的小信号增益，> 15db的功率增益，以及在39-43 GHz频段的16dbm OP-1dB。< 5% EVM时，QPSK/8PSK调制信号的输出为15.5 dBm, 16/64/128 QAM调制信号的输出为13.5 dBm。PA(含pad)占地0.95×0.6 mm2。

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A 43% PAE inverse Class-F power amplifier at 39–42 GHz with a λ/4-transformer based harmonic filter in 0.13-µm SiGe BiCMOS

This paper presents a 2-stage Class-F-1 power amplifier in 0.13 μm SiGe BiCMOS process, achieving 43% peak PAE and 18 dBm Psat at 40.5 GHz. The PA utilizes simple but effective λ/4-transformer based 2nd harmonic-tuning load and relies on a native low capacitive reactance to short all other higher-order harmonics. This reduces the harmonic load complexity significantly and loss thereof, exceeding PAE over 40% at 39.5-42 GHz. The PA achieves >17 dB small signal gain, >15 dB power gain, and 16 dBm OP-1dB at 39-43 GHz. The Pout for <;5% EVM is 15.5 dBm with QPSK/8PSK modulation signals, and 13.5 dBm with 16/64/128 QAM modulation signals. The PA occupies 0.95×0.6 mm2 including pads.

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2016 IEEE MTT-S International Microwave Symposium (IMS)

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