{"title":"新型硅光电倍增管(SiPM)探测器阵列","authors":"T. Gandhi, N. Hartsough, J. Iwanczyk, W. Barber","doi":"10.1109/NSSMIC.2010.5873759","DOIUrl":null,"url":null,"abstract":"We are combining recent developments in nanomaterials with the concept of silicon photomultipliers (SiPMs) to develop cost-effective, large-area photodetectors for applications in medical imaging and other low-light sensing applications. Silicon nanowires are grown inside of a template made up of an array of insulating nanotubes on a quartz substrate, generating a close-packed array of vertically-oriented nanowires. A gold layer positioned at the bottom of each nanotube acts as the catalyst for silicon growth. By doping the silicon as it is grown, each nanowire becomes a p-i-n photodiode. A resistive layer provides the necessary quenching resistance for each photodiode, and pixels are defined by ganging the outputs of a region of nanowires together. Preliminary results of the growth process are presented.","PeriodicalId":13048,"journal":{"name":"IEEE Nuclear Science Symposuim & Medical Imaging Conference","volume":"92 1","pages":"260-263"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel silicon photomultiplier (SiPM) detector arrays\",\"authors\":\"T. Gandhi, N. Hartsough, J. Iwanczyk, W. Barber\",\"doi\":\"10.1109/NSSMIC.2010.5873759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We are combining recent developments in nanomaterials with the concept of silicon photomultipliers (SiPMs) to develop cost-effective, large-area photodetectors for applications in medical imaging and other low-light sensing applications. Silicon nanowires are grown inside of a template made up of an array of insulating nanotubes on a quartz substrate, generating a close-packed array of vertically-oriented nanowires. A gold layer positioned at the bottom of each nanotube acts as the catalyst for silicon growth. By doping the silicon as it is grown, each nanowire becomes a p-i-n photodiode. A resistive layer provides the necessary quenching resistance for each photodiode, and pixels are defined by ganging the outputs of a region of nanowires together. Preliminary results of the growth process are presented.\",\"PeriodicalId\":13048,\"journal\":{\"name\":\"IEEE Nuclear Science Symposuim & Medical Imaging Conference\",\"volume\":\"92 1\",\"pages\":\"260-263\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Nuclear Science Symposuim & Medical Imaging Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.2010.5873759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Nuclear Science Symposuim & Medical Imaging Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2010.5873759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We are combining recent developments in nanomaterials with the concept of silicon photomultipliers (SiPMs) to develop cost-effective, large-area photodetectors for applications in medical imaging and other low-light sensing applications. Silicon nanowires are grown inside of a template made up of an array of insulating nanotubes on a quartz substrate, generating a close-packed array of vertically-oriented nanowires. A gold layer positioned at the bottom of each nanotube acts as the catalyst for silicon growth. By doping the silicon as it is grown, each nanowire becomes a p-i-n photodiode. A resistive layer provides the necessary quenching resistance for each photodiode, and pixels are defined by ganging the outputs of a region of nanowires together. Preliminary results of the growth process are presented.