TCDDC体系制备弱吸收高导电性SiC薄膜的结构特性

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105713

G. Willeke, R. Martins

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引用次数: 1

摘要

在TCDDC(两个连续分解和沉积室)系统中制备的n型SiC薄膜的衍射和其他结构测量表明存在Si微晶体(没有证据表明存在SiC晶体)。弱吸收，高导电层(σ >或=10/sup -1/ (ω -cm)/sup -1/)含有高达20 at。% C和25 at。这些薄膜的光电性能可以用由a-Si:C,O,H矩阵包围的Si微晶体的足够体积分数(高于渗透阈值)来解释。

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Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system

Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10/sup -1/ ( Omega -cm)/sup -1/) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.<>

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

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