Nirav Annavarapu, Mircea Catuneanu, Paul Walther, M. Razavi, Elke Franz, T. Strufe, K. Jamshidi
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Numerical Modeling of Dual Pump Amplifiers in Standard Silicon-on-Insulator Platform for Random Number Generation
The impulse response of a dual pump parametric process in silicon is numerically studied under different scenarios. Strong signal amplification can be seen (up to 30 mW) despite thermal detuning without active temperature stabilization.