沉积重复和退火处理对银纳米线透明导电电极性能的影响

A. R. Fareza, L. Roza, V. Fauzia
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引用次数: 1

摘要

银纳米线(AgNW)是取代昂贵且相对稀有的氧化铟锡(ITO)作为透明导电电极(tce)主要材料的重要候选材料之一。tce是许多光电器件的重要组成部分,如有机发光二极管(OLED)、触摸屏和太阳能电池。tce在光学透射率和电导率方面的特殊属性为光通过该层传输时提取电载流子提供了可能。本研究采用湿化学方法合成AgNW,并采用自旋镀膜的方法沉积在玻璃基板上。为了提高TCEs的性能,采用了优化沉积数量和在玻璃基板上200℃后处理退火的方法。霍尔效应和紫外可见光谱表征结果表明,本研究中AgNW的FOM达到6.27 × 10−3 Ω−1,与商用ITO的FOM为7.16 × 10−3 Ω−1相当。本研究结果为设计和制造一种成本相对较低的新型替代材料提供了一条可行的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of deposition repetition and annealing treatment on the figure of merit of silver nanowire–based transparent conducting electrodes
Silver nanowires (AgNW) is one of the great candidates to replace the role of expensive and relatively rare indium tin oxide (ITO) as the primary material for transparent conducting electrodes (TCEs). TCEs are essential components in numbers of optoelectronic devices, such as organic light-emitting diode (OLED), touchscreen, and solar cells. The specific attribute of TCEs in both optical transmittance and electrical conductivity offers a possible extraction of electrical carriers while transmitting light through the layer. In this study, AgNW was synthesized using a wet chemistry method and deposited on glass substrates with the method of spin coating. In favor to enhance the performance of TCEs, the optimization of number of deposition and post-treatment annealing at 200 °C on glass substrate was then applied. The Hall Effect and UV-Vis Spectroscopy characterization results show that the Figure of Merit (FOM) of AgNW in this study reaches 6.27 × 10−3 Ω−1 that is comparable with FOM of commercial ITO of 7.16 × 10−3 Ω−1. The present results provide a plausible way to design and fabricate a new alternative material for TCEs with relatively low cost.
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