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连续梯度AlxGa1-xAs抛物量子阱的室温太赫兹子带间跃迁

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2019-09-01 DOI:10.1109/IRMMW-THz.2019.8874332
C. Deimert, P. Goulain, J. Manceau, A. Bousseksou, R. Colombelli, Z. Wasilewski
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引用次数: 0

摘要

我们使用连续梯度的Alx Ga1-xAs抛物量子阱演示了室温下太赫兹范围内的子带间跃迁。在100K以下，过渡的线宽达到创纪录的低值，为中心频率的5.7%。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Room temperature THz intersubband transitions in continuously-graded AlxGa1-xAs parabolic quantum wells
We demonstrate room temperature intersubband transitions in the THz range using continuously-graded Alx Ga1-xAs parabolic quantum wells. Below 100K, the linewidth of the transition reaches a record-low value of 5.7% of the central frequency.
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2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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