在完全集成的150 GHz SiGe HBT BiCMOS技术中微波压控振荡器对衬底噪声的敏感性

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1517198

J. Comeau, J. Cressler

{"title":"在完全集成的150 GHz SiGe HBT BiCMOS技术中微波压控振荡器对衬底噪声的敏感性","authors":"J. Comeau, J. Cressler","doi":"10.1109/MWSYM.2005.1517198","DOIUrl":null,"url":null,"abstract":"This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Microwave VCO susceptibility to substrate noise in a fully-integrated 150 GHz SiGe HBT BiCMOS technology\",\"authors\":\"J. Comeau, J. Cressler\",\"doi\":\"10.1109/MWSYM.2005.1517198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1517198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1517198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本研究提出了两个k波段压控振荡器(VCO)，采用完全集成的SiGe HBT BiCMOS技术实现，并分析了它们对衬底噪声的敏感性。这两个vco在设计上是相同的，一个使用螺旋电感谐振槽，而另一个结合薄膜微带传输线。随着寄生衬底噪声的注入，两种vco都表现出显著的(但不同的)衬底耦合行为和性能下降。解释了两个VCO之间的耦合差异及其与VCO相位噪声衰减与控制电压的关系，以及整体VCO设计的含义。

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Microwave VCO susceptibility to substrate noise in a fully-integrated 150 GHz SiGe HBT BiCMOS technology

This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.

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IEEE MTT-S International Microwave Symposium Digest, 2005.

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