一氧化碳对SiC晶须-氧化锆复合材料烧结的影响

A. Mitsui, A. Kato
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引用次数: 1

摘要

在1400℃以上的氩气环境中,碳化硅与钇稳定的氧化锆(YSZ)粉末ZrO2+3/2SiC=ZrC+3/2SiO(g)+1/2CO(g)反应明显。向大气中加入适量的一氧化碳抑制了反应。将这一发现应用于SiC晶须- ysz复合材料的无压烧结。在CO (33%)-Ar气氛下,5vol% SiC晶须- ysz复合材料经1550℃无压烧结1h,致密化至97%理论密度。当晶须含量较高时,在相同的烧结气氛下,随着晶须含量的增加,复合材料的烧结密度降低,这是由于SiC晶须形成了网状结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Carbon Monoxide on the Sintering of SiC Whisker-Zirconia Composite
Reaction between silicon carbide and yttria-stabilized zirconia (YSZ) powders, ZrO2+3/2SiC=ZrC+3/2SiO(g)+1/2CO(g), was appreciable above 1400°C in argon atmospheres. The reaction was suppressed by adding an appropriate amount of carbon monoxide to the atmosphere. This finding was applied to the pressureless sintering of SiC whisker-YSZ composites. In CO (33%)-Ar atmosphere, 5vol% SiC whisker-YSZ composite densified to 97% theoretical density by pressureless sintering at 1550°C for 1h. At higher whisker contents, however, the sintered density of composite decreased with increasing whisker content in the same firing atmosphere, due to the formation of network structure by SiC whisker.
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