{"title":"高灵敏度AlGaN/GaN磁阻传感器器件","authors":"Lingxi Xia, YungC . Liang","doi":"10.1109/ICICDT51558.2021.9626529","DOIUrl":null,"url":null,"abstract":"By profiling the AlGaN layer, the sensitivity of the AlGaN/GaN high-electron-mobility magnetoresistive sensor device can be much enhanced. The previous work on fin-shaped magnetoresistive devices had demonstrated the effect on transitioning the AlGaN profile. In this study, the design is based on a staircase-shaped profile for the sensor, which leads to a unique 2DEG distribution in the transition region. Such a design yields a more stable and higher sensitivity in the measurement of magnetic field in micro-Tesla level.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"43 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-sensitivity AlGaN/GaN magnetoresistive sensor device by profiling the AlGaN layer\",\"authors\":\"Lingxi Xia, YungC . Liang\",\"doi\":\"10.1109/ICICDT51558.2021.9626529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By profiling the AlGaN layer, the sensitivity of the AlGaN/GaN high-electron-mobility magnetoresistive sensor device can be much enhanced. The previous work on fin-shaped magnetoresistive devices had demonstrated the effect on transitioning the AlGaN profile. In this study, the design is based on a staircase-shaped profile for the sensor, which leads to a unique 2DEG distribution in the transition region. Such a design yields a more stable and higher sensitivity in the measurement of magnetic field in micro-Tesla level.\",\"PeriodicalId\":6737,\"journal\":{\"name\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"43 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT51558.2021.9626529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT51558.2021.9626529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-sensitivity AlGaN/GaN magnetoresistive sensor device by profiling the AlGaN layer
By profiling the AlGaN layer, the sensitivity of the AlGaN/GaN high-electron-mobility magnetoresistive sensor device can be much enhanced. The previous work on fin-shaped magnetoresistive devices had demonstrated the effect on transitioning the AlGaN profile. In this study, the design is based on a staircase-shaped profile for the sensor, which leads to a unique 2DEG distribution in the transition region. Such a design yields a more stable and higher sensitivity in the measurement of magnetic field in micro-Tesla level.
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