Dynamic Trapping Related Hysteresis of Effective Output Capacitance in Overvoltage Transients of GaN E-mode Devices

This paper analyzed the hysteresis of effective output capacitance of GaN E-mode devices in overvoltage transients. The hysteresis of effective output capacitance as well as the current transformation between electron current and displacement current are studied by TCAD simulation. The dynamics of trapping in GaN material are illustrated to show the imbalance of stored and released charges in devices, so as to locate the origin of the hysteresis of effective output capacitance. This paper can provide insights into the energy loss of GaN E–mode devices in power conversion applications where overvoltage transients are endangering incidents, such as flyback converters.