Au(111)表面原位生长Au- sn外延薄膜的XPS和LEED研究

S. Barman, P. Sadhukhan, V. Singh, Pramod Bhakuni, S. Barman
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引用次数: 0

摘要

本文建立了一种在超高真空条件下原位沉积Sn在Au(111)上,并进行后退火热处理的方法来生长外延Au-Sn化合物薄膜。利用x射线光电发射光谱和低能电子衍射(LEED)研究了这些薄膜的组成、电子结构和表面有序。AuSn薄膜在室温下生长,而在493 ~ 593 K的温度下退火后得到了成分从Au3Sn到Au6Sn的富au薄膜。AuSn的膜厚为11 nm, Au5Sn的膜厚为26 nm。在LEED模式中观察到尖锐的衍射斑点,确定退火后的薄膜是外延的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-situ growth of epitaxial Au-Sn films on Au(111): An XPS and LEED study
We establish a method of growing epitaxial Au-Sn compound films in ultra-high vacuum by in-situ deposition of Sn on Au(111) and subsequent heat treatment by post-annealing. The composition, electronic structure, and the surface ordering of these films have been studied using x-ray photoemission spectroscopy and low energy electron diffraction (LEED). The AuSn film grows at room temperature, whereas Au-rich films with compositions ranging from Au3Sn to Au6Sn are obtained post-annealing in the temperature range of 493 to 593 K. The thickness of the film is 11 nm for AuSn, which increases to 26 nm for Au5Sn. Sharp diffraction spots in the LEED pattern are observed, establishing that the post-annealed films are epitaxial.
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