InGaP/GaAs HBTs的偏置和温度应力可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843923

A. Rezazadeh, S. Bashar, H. Sheng, F. Amin, L. Cattani, J. Liou

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引用次数: 3

摘要

本文研究了不同基体金属接触体系(Au/Zn/Au、Ti/Au、Ti/Pt/Au和新型Ti/ZrB/sub 2/ Au)的InGaP/GaAs N-p-n HBTs在电流和温度应力下的可靠性。我们进一步报道了三种p-GaAs掺杂杂质Zn, Be-和c的电流应力结果，并研究了用于制作平面自取向HBTs的O/sup +//H/sup +/和O/sup +//He/sup +/离子对器件直流增益稳定性的影响。报道了各因素的典型失稳现象及其对HBT特性的影响。

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Bias and temperature stress reliability of InGaP/GaAs HBTs

The reliability of InGaP/GaAs N-p-n HBTs with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB/sub 2//Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping impurities namely Zn, Be- and C. The effect of O/sup +//H/sup +/ and O/sup +//He/sup +/ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device dc current gain. The instability phenomena typical of each factor and their effects on the HBT characteristics are reported.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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