偏置电压对反应溅射纳米晶TiN薄膜结构、力学和腐蚀性能的影响

IF 3.1 2区 材料科学 Q1 METALLURGY & METALLURGICAL ENGINEERING
Chun-lin He , Jin-lin Zhang , Guo-feng Ma , Zhao-fu Du , Jian-ming Wang , Dong-liang Zhao
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引用次数: 6

摘要

采用直流反应磁控溅射法制备了纳米晶TiN薄膜。利用x射线衍射、场发射扫描电镜、纳米压痕和电化学技术研究了衬底偏压对沉积薄膜结构、力学和腐蚀性能的影响。沉积膜呈柱状结构,其择优取向强烈依赖于偏置电压。优先取向从低偏压(200)面到中等偏压(111)面,再到相对高偏压(220)面。随着偏置电压的升高,沉积膜的纳米硬度H、弹性模量E、H/E*和H3/E*2比值以及耐蚀性先升高后降低。所有的最佳值都出现在- 120 V的偏置下,这归因于薄膜结构精细、致密、缺陷少。这说明TiN膜的微观结构、力学性能和腐蚀性能之间存在着密切的关系,具有最佳力学性能的膜也能提供最有效的腐蚀防护。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of bias voltage on structure, mechanical and corrosion properties of reactively sputtered nanocrystalline TiN films

Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering. The influence of substrate biases on structure, mechanical and corrosion properties of the deposited films was studied using X-ray diffraction, field emission scanning electron microscopy, nanoindentation and electrochemical techniques. The deposited films have a columnar structure, and their preferential orientation strongly depends on bias voltage. The preferential orientations change from (200) plane at low bias to (111) plane at moderate bias and then to (220) plane at relatively high bias. Nanohardness H, elastic modulus E, H/E* and H3/E*2 ratios, and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage. All the best values appear at bias of −120 V, attributing to the film with a fine, compact and less defective structure. This demonstrates that there is a close relation among microstructure, mechanical and corrosion properties of the TiN films, and the film with the best mechanical property can also provide the most effective corrosion protection.

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来源期刊
CiteScore
4.30
自引率
0.00%
发文量
2879
审稿时长
3.0 months
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