Carbon Nanotube FET based Power Shaping Circuit used in Biomedical Applications

This paper provides full-wave rectifier architecture based on carbon nanotubes Field Effect Transistors (CNTFETs). In this shaping (rectifier) circuit the resultant threshold voltage of switching transistor is diminished with the use of bootstrapped capacitors. This architecture has a very good overall power efficiency, ripple and low voltage drop even at very low input voltage (typical voltage $\sim$0.5V) over a ample range of frequency (30-50 MHz). Hence, this rectifier architecture is suitable to use in the environment of low power like implantable biomedical circuits. Dynamic Bulk Switching (DBS) technique has been used to bias the bulk of chosen transistors. This technique lower the leakage current to the bulk reducing on resistance. This architecture works very well at low voltage (0. 5V to 0. 6V) and high operating frequency (50MHz).