CMOS/纳米器件混合电路的混合电阻/场效应晶体管逻辑解复用器架构设计

Shu Li, Tong Zhang
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引用次数: 2

摘要

在CMOS达到尺度限制后,混合纳米电子学正在成为维持摩尔塞拉斯定律的可行选择。混合纳米电子学的一个主要设计挑战是纳米器件交叉棒中高密度纳米线与CMOS领域中相对粗糙的微线之间的界面(称为demux)。以往的解复用设计都是使用单一类型的器件来实现解复用功能,但很难提供令人满意的解决方案。这项工作提出结合电阻与场效应管来实现demux,导致所谓的混合电阻/场效应管逻辑demux。这种混合demux架构可以使这两类器件很好地互补,提高整体demux设计效率。此外,在计算机模拟的基础上,对电阻器电导变化的影响进行了分析和评价。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hybrid resistor/FET-logic demultiplexer architecture design for hybrid CMOS/nanodevice circuits
Hybrid nanoelectronics are emerging as one viable option to sustain the Moorepsilas Law after the CMOS scaling limit is reached. One main design challenge in hybrid nanoelectronics is the interface (named as demux) between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in CMOS domain. The prior work on demux design use a single type of devices to realize the demultiplexing function, but hardly provides a satisfactory solution. This work proposes to combine resistor with FET to implement the demux, leading to the so-called hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices well complement each other to improve the overall demux design effectiveness. Furthermore, the effects of resistor conductance variability are analyzed and evaluated based on computer simulations.
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