基于SRAM的双电源近阈值处理器的机会性能效改进

Yunfei Gu, Dengxue Yan, Vaibhav Verma, M. Stan, Xuan Zhang
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引用次数: 4

摘要

节能微处理器对于广泛的应用是必不可少的。虽然近阈值计算是一种很有前途的提高能源效率的技术,但逻辑核心和片上存储器的最佳供应需求是相互矛盾的。本文对6T SRAM进行了可靠性分析,发现读写操作之间的最小电压要求不平衡。我们通过提出带有写聚合缓冲器的机会双电源开关方案,在具有电压提升能力的近阈值处理器中利用这种不平衡特性。我们的结果表明,该技术提高了18%以上的能源效率,性能加速约为8.54%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SRAM based Opportunistic Energy Efficiency Improvement in Dual-Supply Near-Threshold Processors
Energy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are confiicting. In this paper, we perform reliability analysis of 6T SRAM and discover imbalanced minimum voltage requirements between read and write operations. We leverage this imbalance property in near-threshold processors equipped with voltage boosting capability by proposing an opportunistic dual-supply switching scheme with a write aggregation buffer. Our results show that proposed technique improves energy efficiency by more than 18% with approximate 8.54% performance speed-up.
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