InGaP/InGaAs伪晶三掺杂通道场效应晶体管的研究

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117698

J. Tsai, Jia-Cing Jhou, J. Ou-Yang

{"title":"InGaP/InGaAs伪晶三掺杂通道场效应晶体管的研究","authors":"J. Tsai, Jia-Cing Jhou, J. Ou-Yang","doi":"10.1109/EDSSC.2011.6117698","DOIUrl":null,"url":null,"abstract":"The comparison of DC performance on InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of InGaP/InGaAs pseudomorphic triple doped-channel field-effect transistors\",\"authors\":\"J. Tsai, Jia-Cing Jhou, J. Ou-Yang\",\"doi\":\"10.1109/EDSSC.2011.6117698\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The comparison of DC performance on InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117698\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

比较了三掺杂通道型InGaP/InGaAs伪晶场效应晶体管的直流性能。与均匀型和高-中-低掺杂沟道器件相比，低-中-高掺杂沟道器件具有最宽的栅极电压摆幅和最佳的器件线性度。实验结果表明，低-中-高掺杂通道器件栅极电压摆幅最大值50%以内的跨导为4.62 V，大于均匀(高-中-低)掺杂通道器件的3.58 (3.30)V。

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Investigation of InGaP/InGaAs pseudomorphic triple doped-channel field-effect transistors

The comparison of DC performance on InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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