G. K. Chandrashekara, Srinivasa Reddy, Praveen C Ramamurthy
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引用次数: 0
摘要
为了研究氟化对高效钙钛矿太阳能电池空穴输运材料(BTD-Th和BTD- f -Th)的影响,我们设计并合成了以苯并[1,2-c][1,2,5]噻二唑(BTD)为电子受体单元,噻吩(Th)为简单电子给体单元的新型D-A-D型空穴输运分子。采用钯(0)催化Stille偶联反应合成了D-A-D分子BTD-Th和BTD-F-Th。合成的化合物的电化学带隙在-1.5 eV ~ -1.7 eV之间,是理想的空穴传输材料(含钙钛矿活性层)和有效的电子阻挡层。钙钛矿器件的结构为玻璃/ITO/SnO2/CH3NH3PbI3(钙钛矿)/空穴传输材料/Ag。
Effect of Fluorination on the D-A-D type Hole Transporting Materials for Perovskite Solar Cells
To study the effect of fluorination on hole transporting materials (BTD-Th and BTD-F-Th) for the efficient perovskite solar cells, we designed and synthesized a novel D-A-D type hole transporting molecule having benzo[1,2-c][1,2,5]thiadiazole (BTD) as electron acceptor unit and thiophene (Th) as a simple electron donor unit. The D-A-D molecules BTD-Th and BTD-F-Th were synthesized by palladium(0) catalyzed Stille coupling reaction. The electrochemical band gap of synthesized compounds varies from -1.5 eV to -1.7 eV, Which were ideal for hole transport material (with perovskite active layer) and effective electron blocking layer. The architecture of the perovskite device is glass/ITO/SnO2/CH3NH3PbI3(Perovskite)/Hole Transport Material/Ag.