太赫兹辐射对双耦合量子阱纳米结构中激光脉冲光学特性的影响

J. Shiri, Abdollah Malakzadeh
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引用次数: 1

摘要

研究了探测脉冲激光场在InGaAs\InP双耦合量子阱中的吸收和色散的瞬态和稳态行为。讨论了太赫兹辐射激发、电子隧穿和非相干泵浦对探针场光学特性的影响。在太赫兹(30~300 μm或1~10太赫兹)子带间跃迁中,入射光子能量为(4~41 mev),可能是电子热展宽的顺序(77 K-300 K时为KT~6 mev -25 mev),因此在传统结构中,入射光子可以直接激发基态电子到更高的能级,这一过程实现了太赫兹应用中正确的光开关。通过控制非相干抽运场的速率和量子阱之间的隧穿,我们证明了光脉冲的群速度可以从超光速控制到亚光速,反之亦然。计算了所需的开关时间,我们发现它在3到26皮秒之间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Role of Terahertz Radiation on Optical Properties of Laser Pulse in aDouble Coupled Quantum Well Nanostructure
The transient and steady-state behavior of the absorption and the dispersion of a probe pulse laser field propagating through an InGaAs\InP double coupled quantum well are studied. The effect of terahertz radiation excitation, electron tunnelling and incoherent pumping on the optical properties of the probe field is discussed. In the terahertz (30~300 μm or 1~10 THz) intersubband transition, the incoming photon energy is (4~41 mev) and maybe in the order of electron thermal broadening (KT~6 meV-25 meV for 77 K-300 K). Therefore in the conventional structure, the incoming photon can directly excite the ground state electrons to higher energy levels and this process inhabits the correct optical switching in terahertz applications. We show that the group velocity of a light pulse can be controlled from superluminal to subluminal or vice versa by controlling the rates of incoherent pumping field and tunnelling between the quantum wells. The required switching time is calculated and we find it between 3 to 26 picoseconds.
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