Injun Park, W. Jo, Chanmin Park, Byungchoul Park, Jimin Cheon, Youngcheol Chae
{"title":"一个640×640全动态CMOS图像传感器,用于始终在线的物体识别","authors":"Injun Park, W. Jo, Chanmin Park, Byungchoul Park, Jimin Cheon, Youngcheol Chae","doi":"10.23919/VLSIC.2019.8778169","DOIUrl":null,"url":null,"abstract":"This paper presents a $640\\times 640$ fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8$e_{rms}^{-}$ RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7$e^{-}\\cdot$ nJ.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"40 1","pages":"C214-C215"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition\",\"authors\":\"Injun Park, W. Jo, Chanmin Park, Byungchoul Park, Jimin Cheon, Youngcheol Chae\",\"doi\":\"10.23919/VLSIC.2019.8778169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a $640\\\\times 640$ fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8$e_{rms}^{-}$ RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7$e^{-}\\\\cdot$ nJ.\",\"PeriodicalId\":6707,\"journal\":{\"name\":\"2019 Symposium on VLSI Circuits\",\"volume\":\"40 1\",\"pages\":\"C214-C215\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2019.8778169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition
This paper presents a $640\times 640$ fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8$e_{rms}^{-}$ RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7$e^{-}\cdot$ nJ.