用DECR PECVD在InP衬底上低温沉积SiO/ sub2 /

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147435

F. Plais, B. Agius, N. Proust, S. Cassette, G. Ravel, M. Puech

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引用次数: 0

摘要

讨论了在InP衬底上低温沉积SiO/ sub2 /薄膜的方法。结果表明，SiO/ sub2 /薄膜的物理和化学性质在三个月的时间内是稳定的。x射线光电子能谱(XPS)分析了SiO/sub 2/-InP界面的化学性质，揭示了界面衬底氧化物的存在。MIS C(V)的特性表现为低频色散和深耗竭状态，但研究表明，测量过程会显著影响固定电荷和界面态密度的测定。

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Low temperature deposition of SiO/sub 2/ on InP substrates by DECR PECVD

The low temperature deposition of SiO/sub 2/ thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO/sub 2/ thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO/sub 2/-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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