{"title":"在有源区域利用IGBT的高性能栅极驱动器","authors":"A.N. Githiari, R.J. Leedham, P. Palmer","doi":"10.1109/PESC.1996.548818","DOIUrl":null,"url":null,"abstract":"The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed.","PeriodicalId":19979,"journal":{"name":"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference","volume":"2 1","pages":"1754-1759 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"High performance gate drives for utilizing the IGBT in the active region\",\"authors\":\"A.N. Githiari, R.J. Leedham, P. Palmer\",\"doi\":\"10.1109/PESC.1996.548818\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed.\",\"PeriodicalId\":19979,\"journal\":{\"name\":\"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"2 1\",\"pages\":\"1754-1759 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1996.548818\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1996.548818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance gate drives for utilizing the IGBT in the active region
The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed.
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