一种22nm CMOS 2.4-5.25GHz抗带外阻滞器的混频器

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2021-10-22 DOI:10.1109/ICICM54364.2021.9660241

Yuan Liang, Zhiqun Li, Dongdong Chen, Xiaowei Wang, Zhennan Li

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引用次数: 0

摘要

本文提出了一种基于22纳米CMOS工艺的工作频率为2.4-5.25 GHz的抗阻塞下变频混频器电路，主要由无源开关对、25%占空比发生器、开关电容阵列和具有直流对消功能的基带放大电路四个模块组成。由于采用了基于混频器的射频阻断滤波器，实现了对带外干扰的高弹性。结果表明，在1V电源电压下，电压转换增益优于18db，噪声系数小于13db，工作电流小于9ma。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 22nm CMOS 2.4-5.25GHz Mixer Resilient to Out-of-Band Blockers

An anti-blocking down-conversion mixer circuit with operating frequency of 2.4-5.25 GHz based on 22-nm CMOS process is presented in this paper, which is mainly composed of four modules: passive switch pair, 25% duty cycle generator, switched capacitor array and baseband amplifier circuit with DC cancellation function. High resilience to out-of-band interference is achieved thanks to a mixer-based RF blocker filter. The results show that under 1V power supply voltage, the voltage conversion gain is better than 18 dB, the noise Figure is less than 13 dB, and the operating current is less than 9 mA.

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2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)

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