基于米尺度带状束的集成线性处理离子束溅射系统

Nicholas R. White, August O. Westner
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引用次数: 0

摘要

我们提出了一种能够通过直流离子束溅射进行线性PVD处理的系统,适用于电介质,金属或磁性材料在导电,绝缘或磁性基板上的反应性或高真空沉积。该设备可以安装在单个真空法兰上,用于安装在各种真空系统上,但首选线性流系统。我们最近开发的离子源可以在很宽的能量范围内产生高电流和低发散的带状离子束,但优化为约1至5 keV,高离子电流高达每米宽1A;几米的宽度是可能的。电流密度比现有系统高一个数量级。均匀性本质上很好,可以实时控制。离子源与溅射靶相互靠近并靠近靶安装;当设备放大到大尺寸时,设备的横截面不会改变。离子束在无场区和高真空条件下以最佳角度和能量撞击溅射靶。这种条件的组合是独特的,并大大提高了溅射产量。自由选择光束能量允许更高的热效率。高真空意味着组成薄膜的沉积原子保留了溅射过程中产生的几个电子伏特的全部能量。这种几何结构进一步允许极其简单和有效的反应气体喷射,如氧气,用于生产氧化膜。与现有的离子束溅射系统相比,单宽束源具有更高的电流密度和更紧凑的布局,并且可以以类似线性磁控管的方式安装在线性处理系统中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated Linear-processing Ion-beam Sputtering System Using a Meter-scale Ribbon-beam

We present a system capable of performing linear PVD processing by DC ion beam sputtering, suitable for reactive or high-vacuum deposition of dielectrics, metals, or magnetic materials onto conductive, insulating, or magnetic substrates. This equipment can be installed on a single vacuum flange for mounting on a variety of vacuum systems, but linear flow systems are preferred. Our recently developed ion source can generate ribbon ion beams of high current and low divergence over a wide range of energies, but is optimized for about 1 to 5 keV, and high ion currents of up to 1A per meter breadth; breadths of several meters are possible. The current density is an order of magnitude higher than existing systems. Uniformity is intrinsically good and can be controlled in real-time. The ion source and the sputter target are mounted close to each other and to the target; the cross section of the equipment does not change as the equipment is scaled up to large dimensions. The ion beam impinges on the sputter target at the optimum angle and energy, in a field-free region, and in high vacuum. This combination of conditions is unique, and dramatically raises the sputter yield. Free choice of beam energy permits higher thermal efficiency. High vacuum means that the deposited atoms comprising the film retain the full energy of several eV that was produced in the sputtering process. The geometry further permits extremely simple and efficient jetting of reactive gases such as oxygen for the production of oxide films. The single broad-beam source has far higher current density and a far more compact layout than existing ion-beam sputtering systems, and can be installed in linear processing systems in a similar manner to linear magnetrons.

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