P. Rodríguez- Vázquez, J. Grzyb, N. Sarmah, B. Heinemann, U. Pfeiffer
{"title":"迈向100 Gbps: 230 GHz的全电子90 Gbps一米无线链路","authors":"P. Rodríguez- Vázquez, J. Grzyb, N. Sarmah, B. Heinemann, U. Pfeiffer","doi":"10.23919/EURAD.2018.8546556","DOIUrl":null,"url":null,"abstract":"In this paper we present a fully-electronic, high spectral efficiency one meter wireless link working at a maximum speed of 90 Gbps. It is based on a RF Tx and Rx front-end chipset working at a tunable carrier of 220–260 GHz. The chipset was manufactured in a SiGe 0.13um HBT technology with ft/fmax=350/550 GHz. The Tx delivers a maximum output power of 8.5 dBm and its dc power consumption is 960 m W. The receiver peak conversion gain is 21 dB and its minimum single side band noise figure is 9.5 dB with a power consumption of 1 W. The 6-dB bandwidth measured between the Tx baseband input and the Rx baseband output is 15 GHz. To increase the speed of our previous work of 65 Gbps based on a QPSK modulation scheme, an increase in the spectral efficiency of the link is needed. Applying a back off in the Tx of 4 dB, a link based on a 16-QAM modulation scheme with an spectral efficiency of 2 bits per hertz was achieved. For data-rates of 80 Gbps and below, the EVM achieved was under 11.2%, while for 90 Gbps the measured EVM was 15%.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"54 5 1","pages":"1389-1392"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"Towards 100 Gbps: A Fully Electronic 90 Gbps One Meter Wireless Link at 230 GHz\",\"authors\":\"P. Rodríguez- Vázquez, J. Grzyb, N. Sarmah, B. Heinemann, U. Pfeiffer\",\"doi\":\"10.23919/EURAD.2018.8546556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a fully-electronic, high spectral efficiency one meter wireless link working at a maximum speed of 90 Gbps. It is based on a RF Tx and Rx front-end chipset working at a tunable carrier of 220–260 GHz. The chipset was manufactured in a SiGe 0.13um HBT technology with ft/fmax=350/550 GHz. The Tx delivers a maximum output power of 8.5 dBm and its dc power consumption is 960 m W. The receiver peak conversion gain is 21 dB and its minimum single side band noise figure is 9.5 dB with a power consumption of 1 W. The 6-dB bandwidth measured between the Tx baseband input and the Rx baseband output is 15 GHz. To increase the speed of our previous work of 65 Gbps based on a QPSK modulation scheme, an increase in the spectral efficiency of the link is needed. Applying a back off in the Tx of 4 dB, a link based on a 16-QAM modulation scheme with an spectral efficiency of 2 bits per hertz was achieved. For data-rates of 80 Gbps and below, the EVM achieved was under 11.2%, while for 90 Gbps the measured EVM was 15%.\",\"PeriodicalId\":6472,\"journal\":{\"name\":\"2018 48th European Microwave Conference (EuMC)\",\"volume\":\"54 5 1\",\"pages\":\"1389-1392\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 48th European Microwave Conference (EuMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EURAD.2018.8546556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 48th European Microwave Conference (EuMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EURAD.2018.8546556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Towards 100 Gbps: A Fully Electronic 90 Gbps One Meter Wireless Link at 230 GHz
In this paper we present a fully-electronic, high spectral efficiency one meter wireless link working at a maximum speed of 90 Gbps. It is based on a RF Tx and Rx front-end chipset working at a tunable carrier of 220–260 GHz. The chipset was manufactured in a SiGe 0.13um HBT technology with ft/fmax=350/550 GHz. The Tx delivers a maximum output power of 8.5 dBm and its dc power consumption is 960 m W. The receiver peak conversion gain is 21 dB and its minimum single side band noise figure is 9.5 dB with a power consumption of 1 W. The 6-dB bandwidth measured between the Tx baseband input and the Rx baseband output is 15 GHz. To increase the speed of our previous work of 65 Gbps based on a QPSK modulation scheme, an increase in the spectral efficiency of the link is needed. Applying a back off in the Tx of 4 dB, a link based on a 16-QAM modulation scheme with an spectral efficiency of 2 bits per hertz was achieved. For data-rates of 80 Gbps and below, the EVM achieved was under 11.2%, while for 90 Gbps the measured EVM was 15%.