面向人工智能硬件应用的新型突触晶体管器件

Chun Zhao, T. Zhao, Yixin Cao, Yina Liu, Li Yang, I. Mitrovic, E. G. Lim, Cezhou Zhao
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引用次数: 0

摘要

在过去的几十年里,用于内存计算的突触装置由于其高效率的计算潜力和模拟生物神经行为的能力而得到了广泛的研究。然而,传统的双端突触记忆电阻器由于大规模并行和异步存储-读取过程而导致电阻降低,限制了其发展。近年来,研究人员开始关注类似晶体管的人工突触。由于绝缘层的存在和输入端与读取端的分离,三端突触晶体管被认为在人工智能应用领域具有更大的潜力。在这项工作中,总结了突触晶体管的最新进展和未来的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced synaptic transistor device towards AI application in hardware perspective
For the past decades, the synaptic devices for the inmemory computing have been widely investigated due to the high-efficiency computing potential and the ability to mimic biological neurobehavior. However, the conventional twoterminal synaptic memristors show drawbacks of resistance reduction caused by large-scale paralleling and asynchronous storage-reading process, which limit its development. Recently, researchers have paid attention to the transistor-like artificial synapse. Due to the existence of insulator layer and the separation of input and read terminals, the three-terminal synaptic transistors are believed to have greater potential towards artificial intelligence (AI) application fields. In this work, a summary of recent progresses and the future challenges of synaptic transistors are discussed.
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