自加热CMOS流量传感器

2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) Pub Date : 2021-06-20 DOI:10.1109/Transducers50396.2021.9495463

Reshmi Waikhom, Lung-Jieh Yang, Horng-Yuan Shih, C. Kuo

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引用次数: 1

摘要

本文报道了一种由UMC $0.18\ \mu \ mathm {m}$ CMOS MEMS代工厂制造的多晶硅流量传感器的新设计。我们的自热设计不同于传统的由另一个加热器加热的带有电阻温度检测器(RTD)的浮板设计，我们的自热RTD半桥芯片尺寸仅为$300\ \乘以250\ \ \ \mu \ \math {m}^{2}$。这种新设计输出的归一化灵敏度为$138\ \mu \mathrm{V}/\mathrm{V}/(\mathrm{m}/\mathrm{s})$，速度范围为0-15 m/s。灵敏度是y - k的89%。李在IEEE MEMS 2020中的工作。假体试验和无方向风洞试验也验证了传感器的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-Heating CMOS Flow Sensor

This paper reports a new design of polysilicon flow sensor fabricated by UMC $0.18\ \mu \mathrm{m}$ CMOS MEMS foundry. Our self-heating design is different from the conventional one which has floating plate with resistive temperature detectors (RTDs) heated by another heater aside, and our self-heating RTD half-bridge is only $300\times 250\ \mu \mathrm{m}^{2}$ in chip size. This new design outputs a normalized sensitivity of $138\ \mu \mathrm{V}/\mathrm{V}/(\mathrm{m}/\mathrm{s})$ within the speed range of 0-15 m/s. This sensitivity is 89% of Y.-K. Lee's work in IEEE MEMS 2020. The dummy specimen and the orientation-free wind tunnel tests also confirmed the sensor performance.

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2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

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