具有“热释电晶圆”栅极的热释晶体管-砷化镓场效应晶体管

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522464

Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko

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引用次数: 1

摘要

通过人为降低GaAs和其他III-V型半绝缘晶体的电响应对称性，可以将其从压电型转变为热释电型，从而扩大其多功能特性。III-V型半导体的人工热释电可以作为单晶热释电传感器的基础。GaAs(111)晶片的电压灵敏度与PZT热释电陶瓷的电压灵敏度相当，因此GaAs晶片可以作为热电转换器用于新型微电子器件“热释电晶体管”中，该器件是基于MESFET技术的非冷却远红外探测器。

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Pyrotransistor-GaAs FET with a "pyroelectric wafer" gate

The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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