{"title":"SPICE兼容单电子晶体管(SET)瞬态模型","authors":"Y. Yu, Y. Jung, S. Hwang, D. Ahn","doi":"10.1109/ICVC.1999.820945","DOIUrl":null,"url":null,"abstract":"In this paper, we introduce a SPICE compatibile SET transient model. The basic recipe of our model is similar to CAMSET but we have adopted a much simpler way for the truncation of the number of charge states required in the calculation. The validity of our model has been checked by comparing our transient calculation with the result of the steady-state master equation method.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"3 1","pages":"403-406"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A SPICE compatible single electron transistor (SET) transient model\",\"authors\":\"Y. Yu, Y. Jung, S. Hwang, D. Ahn\",\"doi\":\"10.1109/ICVC.1999.820945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we introduce a SPICE compatibile SET transient model. The basic recipe of our model is similar to CAMSET but we have adopted a much simpler way for the truncation of the number of charge states required in the calculation. The validity of our model has been checked by comparing our transient calculation with the result of the steady-state master equation method.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"3 1\",\"pages\":\"403-406\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SPICE compatible single electron transistor (SET) transient model
In this paper, we introduce a SPICE compatibile SET transient model. The basic recipe of our model is similar to CAMSET but we have adopted a much simpler way for the truncation of the number of charge states required in the calculation. The validity of our model has been checked by comparing our transient calculation with the result of the steady-state master equation method.