用于fpga的基于忆阻器的LUT

Haider A. F. Almurib, T. N. Kumar, F. Lombardi
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引用次数: 20

摘要

提出了一种基于忆阻器的fpga查找表(LUT)。该存储器采用忆阻器作为存储元件,NMOS晶体管作为选择。提出了新的WRITE和READ操作;建议的LUT不需要额外的电路来处理字行和位行的WRITE 1(0)操作。此外,它只需要一个RESTORE脉冲来执行read0操作。该方法的WRITE操作只需要三根电源线(+Vdd, -Vdd和Gnd)和一个RESTORE脉冲进行READ 0操作,因此与以前的方法相比,在电源线数量和READ时间上节省了25%。利用LTSPICE对所提出的LUT进行了仿真,并给出了不同工作特征的仿真结果,如忆阻的归一化状态参数、脉冲宽度、LUT尺寸和MOSFET特征尺寸。这些结果表明,与fpga技术文献中发现的其他基于忆阻器的方案相比,所提出的方案具有优越的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A memristor-based LUT for FPGAs
This paper presents a memristor-based Look-Up Table (LUT) for FPGAs. The proposed memory utilizes memristors as storage elements and NMOS transistors for selection. New WRITE and READ operations are proposed; the proposed LUT requires no additional circuit to handle the WRITE 1 (0) operation for both the word and bit lines. Also, it requires a RESTORE pulse only for the READ 0 operation. The WRITE operation of the proposed method requires three power lines (+Vdd, -Vdd and Gnd) and a RESTORE pulse only for the READ 0 operation, thus accomplishing savings of 25% for both the number of power lines and READ time when compared to previous methods. The proposed LUT is simulated using LTSPICE and extensive simulation results are presented with respect to different operational features, such as normalized state parameter of the memristance, pulse width, LUT size and MOSFET feature size. These results show that the proposed scheme offers superior performance compared with other existing memristor-based schemes found in the technical literature for FPGAs.
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