{"title":"In/Se双分子层热退火生长硒化铟薄膜","authors":"R. Panda, U. Singh, R. Naik, N. Mishra","doi":"10.1063/1.5113111","DOIUrl":null,"url":null,"abstract":"The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"26 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Growth of indium selenide thin films by thermal annealing of In/Se bilayer\",\"authors\":\"R. Panda, U. Singh, R. Naik, N. Mishra\",\"doi\":\"10.1063/1.5113111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.\",\"PeriodicalId\":10874,\"journal\":{\"name\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"volume\":\"26 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.5113111\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5113111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of indium selenide thin films by thermal annealing of In/Se bilayer
The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.
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