多晶硅Mems冲击破裂模拟

微纳电子与智能制造 Pub Date : 2006-04-24 DOI:10.1109/ESIME.2006.1643984

A. Corigliano, F. Cacchione, A. Frangi, S. Zerbini

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引用次数: 5

摘要

本文采用Voronoi镶嵌法和有限元网格法建立了多晶硅微机电系统的二维几何模型，研究了多晶硅微机电系统的冲击破裂问题。采用黏聚牵引-跳跃软化规律模拟了沿晶和穿晶破裂过程;采用简化的三层次多尺度方法对意外跌落进行了模拟

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Simulation of Impact Rupture in Polysilicon Mems

The problem of impact rupture in polysilicon MEMS is addressed in this paper employing a numerical 2D geometrical model of the polycrystal obtained by means of a Voronoi tessellation coupled with a FE mesh. The intergranular and transgranular rupture is simulated by means of cohesive traction-jumps softening laws; accidental drop is simulated through a simplified three-level multi scale approach

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来源期刊

微纳电子与智能制造

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145