Improved Performance of Platinum Diselenide Based Surface Plasmon Resonance Biosensor Using Silicon

After the discovery of graphene in 2004, two-dimensional materials have attracted attention at large scale because of their peculiar structure and extraordinary properties. As they have large potential in future nano electronics, two-dimensional transition metal dichalcogenides has become most focus topic of study. Transition metal dichalcogenides with tunable finite band gap and significant transitional behavior are much suitable for the construction of electronic and optoelectronic devices of high-performance. However, platinum diselenide is group-10 transition metal dichalcogenides which occur naturally in one phase transition, which has been theoretically predicted as an excellent material. The proposed structure of surface plasmon resonance (SPR) -based biosensor consists of a silicon and two-dimensional nanomaterial platinum diselenide. The performance parameters of proposed biosensor (surface plasmon resonance-based) such as detection accuracy, figure of merit, sensitivity, full width at half maximum have been investigated. The sensitivity, detection accuracy, full width half maximum and figure of merit of proposed surface plasmon resonance biosensor having silver (50 nm), silicon (2 nm) and one layer of platinum diselenide with 2 nm thickness at 633 nm wavelength is 2200RIU–1 , 0.20 deg–1, 4.980 and 44.22 RIU–1 respectively. Silicon sheet is used in the middle of the Ag and platinum diselenide to prevent the oxidation of silver and enhance the sensitivity of platinum diselenide based surface plasmon resonance biosensor. The sensitivity of conventional surface plasmon resonance biosensor and the proposed surface plasmon resonance biosensor without silicon layer is 1700RIU–1 and 2000RIU–1 respectively. Surface plasmon resonance biosensor of device structure CaF2/Ag/Si/PtSe2 has higher sensitivity in comparison to device structures CaF2/Ag (conventional) and CaF2/Ag/PtSe2 (without Silicon Layer) by 29.41% and 10% respectively. Although the highest sensitivity obtained is 2620RIU–1 for 60 nm silver with 3 nm silicon layer except the platinum diselenide layer.