退火温度对无氧高电导率铜恢复过程中亚晶粒生长的影响

Chung-Min R Chang, John R Serrano, S.K Varma
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引用次数: 4

摘要

本文研究了两种不同退火温度下无氧高导电性铜在静态恢复过程中的亚晶粒生长动力学。在175°C和200°C下,冷拔铜丝的亚晶粒尺寸随退火时间的变化而变化。在这些温度下,亚晶粒直径的平方D2与退火时间t之间建立了线性关系。在175°C和200°C时,谱线的斜率K分别为5.4 × 10−18M2s−1和7.2 × 10−18M2s−1。实验观测到的K值与理论计算的K值有很大的差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of annealing temperature on subgrain growth during recovery in oxygen-free high conductivity copper

An attempt has been made to study the kinetics of subgrain growth during static recovery in oxygen-free high conductivity copper at two different annealing temperatures. The changes in subgrain sizes were followed in a cold-drawn copper wire as a function of annealing time at 175 and 200°C. A linear relationship between the square D2 of the subgrain diameter and the annealing time t has been established at these temperatures. The slopes K of the lines have been found to be 5.4 × 10−18M2s−1 and 7.2 × 10−18m2s−1 at 175°C and 200°C respectively. A large difference between the experimentally observed and theoretically calculated K values has been found.

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