新型非线性Ba2Ga8GeS16和Ba2Ga8(GeSe2)S14晶体中红外光谱的光学和生成特性

IF 0.9 4区工程技术 Q3 Engineering

Quantum Electronics Pub Date : 2022-03-01 DOI:10.1070/qel17995

V. Badikov, D. V. Badikov, G. Shevyrdyaeva, V. Laptev, A. A. Melnikov, S. Chekalin

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引用次数: 0

摘要

首次生长出大尺寸、高光学质量的Ba2Ga8GeS16和Ba2Ga8(GeSe2)S14单晶。测量了它们的线性光学特性——在0.3 ~ 25 μm范围内的透射光谱、主折射率的色散和双折射。波长为8.3 μm、波长为100 fs的激光脉冲对晶体进行辐照，可产生与AgGaS2晶体相当的二次谐波。

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Optical and generation characteristics of new nonlinear Ba2Ga8GeS16 and Ba2Ga8(GeSe2)S14 crystals for the mid-IR range

Ba2Ga8GeS16 and Ba2Ga8(GeSe2)S14 single crystals of large size and good optical quality have been grown for the first time. Their linear optical characteristics – transmission spectra in the range of 0.3 – 25 μm, dispersion of principal refractive indices, and birefringence – have been measured. Irradiation of the crystals by 100-fs laser pulses with a wavelength of 8.3 μm initiated second-harmonic generation with an efficiency comparable with that obtained for the AgGaS2 crystal.

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来源期刊

Quantum Electronics 工程技术-工程：电子与电气

CiteScore

3.00

自引率

11.10%

发文量

审稿时长

3-6 weeks

期刊介绍： Quantum Electronics covers the following principal headings Letters Lasers Active Media Interaction of Laser Radiation with Matter Laser Plasma Nonlinear Optical Phenomena Nanotechnologies Quantum Electronic Devices Optical Processing of Information Fiber and Integrated Optics Laser Applications in Technology and Metrology, Biology and Medicine.