小(GaAs)n簇(n= 2、3、4、5、6和8)的结构和极化率

P. Karamanis, D. Bégué, C. Pouchan
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引用次数: 5

摘要

基于相关一致的大核相对论伪势基集,利用传统的从头算和密度泛函方法研究了n (n= 2、3、4、5、6和8)小化学计量砷化镓簇(GaAs)的结构和极化率。我们的结果表明,与所有电子基集相比,基于这些基集的计算得到了合理的结果,并且预测到八聚体的小砷化镓团簇的极化率/原子大于Clausius-Mosotti体积值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structure and Polarizability of Small (GaAs)n Clusters (n= 2, 3, 4, 5, 6, and 8)
We studied the structure and polarizability of small stoichiometric gallium arsenide clusters (GaAs)n (n= 2, 3, 4, 5, 6 and 8) with conventional ab-initio and density functional methods relying on correlation consistent large-core relativistic pseudo potential basis set. Our results show that computations based on those basis sets yield reasonable results compared to all electron basis sets and the polarizability/atom of small gallium arsenide clusters up to the octamer, is predicted to be larger than the Clausius-Mosotti bulk value.
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