Haotian Zhu, Q. Xue, S. Pang, Jianan Hui, Xinghai Zhao
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引用次数: 5
摘要
在本文中，介质带波导(drw)被设计工作在750-1000 GHz。在该频段内，选择了高电阻率硅制造工艺的深度反应离子刻蚀(Deep Reactive Ion Etching, DRIE)来制造DRW。实验表明，在750-1000GHz范围内，DRW的平均衰减常数仅为0.107dB/mm。实验结果与模拟结果吻合较好。
Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750–1000GHz
In this paper, dielectric ribbon waveguides (DRWs) are designed to work at 750-1000 GHz. In this frequency band, the Deep Reactive Ion Etching (DRIE) of high resistivity silicon fabrication process is selected to fabricate the DRW. Our experiments show that the average attenuation constant of DRW is merely 0.107dB/mm at 750-1000GHz. Good agreements between the measured and simulated results are observed.
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