快速重离子辐照对锡酸锌薄膜结构、电学和光学性能的影响

Y. Kumar, Ravi Kumar, K. Asokan, Avineesh Singh
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引用次数: 6

摘要

本研究采用120 MeV银离子辐照锡酸锌(Zn-Sn-O)薄膜。利用掠入射x射线衍射(GIXRD)、双探针法和紫外可见光谱研究了改性后的结构、电学和光学性能。通过x射线衍射(GIXRD)观察到晶体向非晶态相变。电学研究表明,电阻率随掺杂和辐照而增加。在室温下,原始Zn-Sn-O薄膜的最小电阻率为14 mΩ cm。原始锡酸锌薄膜和SHI辐照后的锡酸锌薄膜在可见光区的平均透过率均在75%以上。本研究采用120 MeV银离子辐照锡酸锌(Zn-Sn-O)薄膜。利用掠入射x射线衍射(GIXRD)、双探针法和紫外可见光谱研究了改性后的结构、电学和光学性能。通过x射线衍射(GIXRD)观察到晶体向非晶态相变。电学研究表明,电阻率随掺杂和辐照而增加。在室温下,原始Zn-Sn-O薄膜的最小电阻率为14 mΩ cm。原始锡酸锌薄膜和SHI辐照后的锡酸锌薄膜在可见光区的平均透过率均在75%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of swift heavy ion irradiation on structural, electrical and optical properties of zinc-stannate thin films
In the present study, 120 MeV Ag ions were irradiated onzinc-stannate (Zn-Sn-O) thin films. The modifications in the structural, electrical and optical properties were studied using grazing-incidence x-ray diffraction (GIXRD), two probe method and UV-Vis spectroscopy. The crystalline to amorphous phase transformation was observed from GIXRD data. The electrical studies revealed that the resistivity has increased with doping and on irradiation. The minimum resistivity of 14 mΩ cm, at room temperature, has been observed for pristine Zn-Sn-O thin film. The average optical transmittance was above 75% in visible region for both pristine and SHI Irradiated zinc-stannate thin films.In the present study, 120 MeV Ag ions were irradiated onzinc-stannate (Zn-Sn-O) thin films. The modifications in the structural, electrical and optical properties were studied using grazing-incidence x-ray diffraction (GIXRD), two probe method and UV-Vis spectroscopy. The crystalline to amorphous phase transformation was observed from GIXRD data. The electrical studies revealed that the resistivity has increased with doping and on irradiation. The minimum resistivity of 14 mΩ cm, at room temperature, has been observed for pristine Zn-Sn-O thin film. The average optical transmittance was above 75% in visible region for both pristine and SHI Irradiated zinc-stannate thin films.
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