硫化锌(ZnS)单量子阱、硒化锌(ZnSe)和碲化锌(ZnTe)单量子阱二维迁移率的比较研究

2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT) Pub Date : 2018-03-01 DOI:10.1109/EDCT.2018.8405096

Palasri Dhar, A. Ghosal

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摘要

在本文中，考虑到不同的晶格散射机制，即电离杂质散射和声子散射，作者计算了ZnS, ZnSe和ZnTe中的二维迁移率作为温度的函数。对ZnS、ZnSe和ZnTe的二维迁移率进行了比较研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Two dimensional mobility in Zinc Sulpide (ZnS) single quantum well, Zinc Selenide (ZnSe) and Zinc telluride(ZnTe) single quantum well : A comparative study

In this paper, the authors have calculated the two dimensional mobility in ZnS, ZnSe and ZnTe as a function of temperature taking into account the different lattice scattering mechanisms, namely Ionised Impurity scattering and Acoustic phonon scattering. A comparative study of two dimensional mobility of ZnS,ZnSe and ZnTe has been made.

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2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)

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