非平衡温度和载流子对双极半导体中欧姆定律的影响

Y. Gurevich, I. Lashkevych
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引用次数: 1

摘要

在一般情况下,即考虑非平衡载流子(电子和空穴)和非平衡温度对电荷输运的影响时,研究了从两侧连接到金属的双极半导体的线性电导率。让我们注意到,当电流相对于电流以线性近似流动时,在双极半导体中,电能和能量的非平衡会自动产生。得到了双极半导体电导率的表达式,它取决于电子和空穴的电导率、热导率、带隙、载流子的寿命、半导体-金属接触表面的复合率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of nonequilibrium temperature and charge carriers on the Ohm's law in a bipolar semiconductor
The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.
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