嵌入式MRAM技术的最新进展及未来发展方向

2019 Symposium on VLSI Circuits Pub Date : 2019-06-01 DOI:10.23919/VLSIC.2019.8777932

W. Gallagher, Eric Chien, T. Chiang, Jian-Cheng Huang, Meng-Chun Shih, C. Y. Wang, C. Bair, George Lee, Y. Shih, Chia-Fu Lee, Roger Wang, K. Shen, J. J. Wu, Wayne Wang, H. Chuang

{"title":"嵌入式MRAM技术的最新进展及未来发展方向","authors":"W. Gallagher, Eric Chien, T. Chiang, Jian-Cheng Huang, Meng-Chun Shih, C. Y. Wang, C. Bair, George Lee, Y. Shih, Chia-Fu Lee, Roger Wang, K. Shen, J. J. Wu, Wayne Wang, H. Chuang","doi":"10.23919/VLSIC.2019.8777932","DOIUrl":null,"url":null,"abstract":"MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-reflow-capable MRAM NVM and for extensions that trade off high retention against speed, power, and density.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"1 1","pages":"T190-T191"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent Progress and Next Directions for Embedded MRAM Technology\",\"authors\":\"W. Gallagher, Eric Chien, T. Chiang, Jian-Cheng Huang, Meng-Chun Shih, C. Y. Wang, C. Bair, George Lee, Y. Shih, Chia-Fu Lee, Roger Wang, K. Shen, J. J. Wu, Wayne Wang, H. Chuang\",\"doi\":\"10.23919/VLSIC.2019.8777932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-reflow-capable MRAM NVM and for extensions that trade off high retention against speed, power, and density.\",\"PeriodicalId\":6707,\"journal\":{\"name\":\"2019 Symposium on VLSI Circuits\",\"volume\":\"1 1\",\"pages\":\"T190-T191\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2019.8777932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8777932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

MRAM可以在先进的VLSI技术中扮演各种片上存储角色，从高保留率，具有焊接回流功能的非易失性存储器(NVM)到密集非易失性或高保留率的工作ram。本文描述了具有焊接回流功能的MRAM NVM的结果，以及在速度、功率和密度方面权衡高保留的扩展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Recent Progress and Next Directions for Embedded MRAM Technology

MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-reflow-capable MRAM NVM and for extensions that trade off high retention against speed, power, and density.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 Symposium on VLSI Circuits

自引率

0.00%

发文量