Wei Yu, Zi-cai Zhang, Kun Zhang, Xiaoyun Teng, Shujie Wu, Li Zhang, Mingjing Chen, G. Fu
{"title":"退火对溶胶-凝胶法制备ZnO:Mn薄膜光致发光的影响","authors":"Wei Yu, Zi-cai Zhang, Kun Zhang, Xiaoyun Teng, Shujie Wu, Li Zhang, Mingjing Chen, G. Fu","doi":"10.1109/SOPO.2009.5230111","DOIUrl":null,"url":null,"abstract":"ZnO:Mn thin flims were fabricated by Sol-gel technique. the effect of annealing time on the photoluminescence (PL) properties of the prepared flims has been investigated. The room temperature PL of ZnO:Mn films is shown to consist of an UV emission band due to radiative recombination of free excitons and a weak green band signated as the radiative transition from Zn vacancies(VZn) to Oxygen antisites. It is shown that whereas increasing annealing time make both of emission bands increase, an enhacement for the relative intensity of green emission compared to that of UV emission is obtend. Meanwhile, An increse of saturation magnetizations was also observed. All results provided clear evidences that although the annealing have the effect of ameliorate the microstructure of ZnO:Mn flim, the accompanied increased VZn defects make the magnetic moments become more alignd. Keywords-sol-gel; ZnMnO; PL; ferromagnetism; VZn","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Influence of Annealing on Photoluminescence of ZnO:Mn Thin Flims Grown by Sol-Gel Technique\",\"authors\":\"Wei Yu, Zi-cai Zhang, Kun Zhang, Xiaoyun Teng, Shujie Wu, Li Zhang, Mingjing Chen, G. Fu\",\"doi\":\"10.1109/SOPO.2009.5230111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ZnO:Mn thin flims were fabricated by Sol-gel technique. the effect of annealing time on the photoluminescence (PL) properties of the prepared flims has been investigated. The room temperature PL of ZnO:Mn films is shown to consist of an UV emission band due to radiative recombination of free excitons and a weak green band signated as the radiative transition from Zn vacancies(VZn) to Oxygen antisites. It is shown that whereas increasing annealing time make both of emission bands increase, an enhacement for the relative intensity of green emission compared to that of UV emission is obtend. Meanwhile, An increse of saturation magnetizations was also observed. All results provided clear evidences that although the annealing have the effect of ameliorate the microstructure of ZnO:Mn flim, the accompanied increased VZn defects make the magnetic moments become more alignd. Keywords-sol-gel; ZnMnO; PL; ferromagnetism; VZn\",\"PeriodicalId\":6416,\"journal\":{\"name\":\"2009 Symposium on Photonics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2009.5230111\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of Annealing on Photoluminescence of ZnO:Mn Thin Flims Grown by Sol-Gel Technique
ZnO:Mn thin flims were fabricated by Sol-gel technique. the effect of annealing time on the photoluminescence (PL) properties of the prepared flims has been investigated. The room temperature PL of ZnO:Mn films is shown to consist of an UV emission band due to radiative recombination of free excitons and a weak green band signated as the radiative transition from Zn vacancies(VZn) to Oxygen antisites. It is shown that whereas increasing annealing time make both of emission bands increase, an enhacement for the relative intensity of green emission compared to that of UV emission is obtend. Meanwhile, An increse of saturation magnetizations was also observed. All results provided clear evidences that although the annealing have the effect of ameliorate the microstructure of ZnO:Mn flim, the accompanied increased VZn defects make the magnetic moments become more alignd. Keywords-sol-gel; ZnMnO; PL; ferromagnetism; VZn
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
