波导耦合等离子体纳米隙集成相变超表面

Ahmed H. Elfarash, A. Mandal, B. Gholipour
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引用次数: 1

摘要

硅光子学已经成为短距离、芯片间通信的主要技术平台,用于各种光子计算和传感应用,因为它在调制和限制跨电信频率的光方面具有效率,此外还有其固有的CMOS兼容性。在硅光子体系结构中集成金属纳米隙为通过等离子体提供的极端限制来扩展该平台提供了一条有前途的途径,同时为未来的光子集成电路与电子设备的接口提供了一条有效的途径。然而,为了在电信频率上有效运行,制造等离子共振纳米隙所需的间隙尺寸(< λg/10)是极具挑战性的。从波导到等离子体纳米隙的有效耦合也是损耗的主要来源。在这里,我们展示了融合这些平台的关键在于将超材料/超表面工程原理应用于纳米间隙的设计。在过去的十年中,超材料和超表面已经成为控制和增强纳米光子器件平台中应用驱动波长的光-物质相互作用的多功能工具包。我们的研究表明,在由金制成的波导耦合等离子体纳米隙内集成一个介栅,可以增强与硅波导之间的耦合。此外,在间隙内结合超表面允许共振响应保持在用户指定的感兴趣波长,间隙大至λg/5,大大简化了制造。最后,我们表明,通过在间隙中加入可重构的相变硫系合金,可以在电信频率上实现调制对比度高达10:1的非易失性信号切换。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Waveguide-coupled plasmonic nanogap-integrated phase change metasurfaces
Silicon photonics has emerged as the dominant technology platform for short distance, inter-chip communication for a variety of photonic computing and sensing applications due to its efficiency in modulation and confinement of light across telecom frequencies in addition to its inherent CMOS compatibility. The integration of metallic nanogaps within silicon photonic architectures provides a promising route for scaling this platform through the extreme confinement offered by plasmonics while providing an efficient route to interfacing future photonic integrated circuits with electronics. However, fabricating the gap sizes (< λg/10) required of plasmonic resonating nanogaps for efficient operation across telecommunication frequencies is highly challenging. Efficient coupling from waveguides to plasmonic nanogaps also remains a major source of loss. Here, we show that the key to merging these platforms lies in applying metamaterial/metasurface engineering principles to the design of the nanogap. Over the last decade, metamaterials and metasurfaces have emerged as a versatile toolkit for control and enhancement of light-matter interaction at application-driven wavelengths of interest in nanophotonic device platforms. We show that integrating a metagrating within a waveguide-coupled plasmonic nanogap made from Au, can enhance coupling to and from the silicon waveguides. Furthermore, the incorporation of the metasurface within the gap allows resonant response to be maintained at user-specified wavelength of interest with gaps as large as λg/5, drastically easing fabrication. Finally, we show that by incorporating a reconfigurable phase change chalcogenide alloy into the gap, non-volatile signal switching with modulation contrasts of up to 10:1 can be achieved across telecom frequencies.
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